View SXB-2089Z_1320172.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SXB-2089Z
Product Description
Sirenza Microdevices' SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 5-2500 MHz Cellular, ISM, WLL, PCS & W-CDMA applications. It's high linearity makes it an ideal choice for multi-carrier as well as digital applications.
5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier RoHS Compliant Pb & Green Package
50 45 40 35 30 25 20 15 10 5 0
Typical IP3, P1dB, Gain
IP3 IP3 IP3
Product Features
* * * * * *
High OIP3: +43dBm at 1960 MHz P1dB: 24dBm High Linearity/ACP Performance Robust 2000V ESD, Class 2 SOT-89 package MSL 1 moisture rating
P1dB Gain
P1dB Gain
P1dB Gain
Applications
* PA Driver Amplifier * IF Amplifier * Cellular, PCS, ISM, WLL, W-CDMA
U n its M in . T yp . M ax.
880 MHz
S ym b o l
1960 MHz
P a ra m e te rs
2140 MHz
P 1dB
O u tp u t P o w e r a t 1 d B C o m p re s sio n
dBm
450 M H z 880 M H z 1960 M H z 2140 M H z 450 M H z 880 M H z 1960 M H z 2140 M H z 450 M H z 880 M H z 1960 M H z 2140 M H z 450 M H z 880 M H z 1960 M H z 2140 M H z 450 M H z 880 M H z 1960 M H z 2140 M H z 450 M H z 880 M H z 1960 M H z 2140 M H z Vs = 8V R b ia s = 2 0 O h m s V d e v ic e = 5 .2 V
23 23
24 2 4 .5 2 4 .5 2 4 .5 25 23 17 17 1 .1 1 .4 1 .6 1 .3 4 .9 4 .5 4 .7 4 .2 2 4 .5 2 1 .5
S 21
S m a ll S ig n a l G a in
dBm
2 1 .5 1 5 .5
S 11
In p u t V S W R
2 .5
NF
N o is e F ig u re
dB
6
O IP 3
T h ird O rd e r In te rc e p t P o in t (P o u t/to n e = + 1 1 d B m , T o n e s p a c in g = 1 M H z)
dBm
38 40
40 41 43 43 16 1 6 .3 1 5 .5 1 5 .6
ACP
C hannel Power IS -9 5 a t 4 5 0 /8 8 0 /1 9 6 0 M H z, -5 5 d B c A C P W C D M A a t 2 1 4 0 M H z, -5 0 d B c A C P
dBm
ID R T H , j-l
D e vic e C u rre n t
mA @ 8 5 C (ju n c tio n - le a d )
ZO = 50 Ohm s
120
135 5 1 .3
150
Test h e rm a l R e s is ta n c e Conditions: T
T a = 2 5 C
C /W
T e s t C o n d itio n s :
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 1
http://www.sirenza.com
EDS-104625 Rev C
SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier
Absolute Maximum Ratings
Parameter Max Device Current (IDQ) Max Device Voltage (VD) Max. RF Input Power Max. Operating Dissipated Power (quiescent) Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. Absolute Limit 190mA 6V +20 dBm
Id (mA)
200 Id (25C) 150 Id (-40C) Id (85C) 100 50 0 0 2 4 6 8 10 250
DCIV over Temperature (with App. Circuits)
1.0 W +150C -40C to +85C +150C
Test Conditions: Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=TLEAD
Voltage (V)
Noise Figure (with Application Circuits)
6
25C 85C
ESD Class 2, 2000V HBM
5
NF (dB)
Appropriate precautions in handling, packaging and testing devices must be observed.
4 3 2 1 0 450 MHz 880 MHz 1960 MHz 2140 MHz
MSL (Moisture Sensitivity Level) Rating: Level 1
Simplified Device Schematic with ESD diodes
Narrowband App. Ckt.
Vc/Output Input
Narrowband App. Ckt.
Gnd
303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com
EDS-104625 Rev C
SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier
880 MHz Application Circuit Data, ID=135mA, T=+25C, RBias=20 Ohm, VS=8V
26 26 25
P1dB vs. Frequency
-40 -45 -50
ACP vs. Ch. Power (IS-95 9 Ch. Fwd. 880MHz)
25C -40C 85C
P1dB (dBm)
ACP (dB)
25C -40C 85C 860 870 880 890 900 910
25 24 24 23 23 22 850
-55 -60 -65 -70 -75 10 11 12
Frequency (MHz)
13
14
15
16
17
18
19
Channel Power (dBm)
S21 over Temperature
28
0
Input/Output Return Loss, Isolation vs. Frequency, T=25C
-5 -10 S11 S12 S22
26 24 22 25C 20 18 850 -40C 85C
Gain (dB)
-15
dB
890 900 910
-20 -25 -30 -35 -40 850 860 870 880 890 900 910
860
870
880
Frequency (MHz)
Frequency (MHz)
46 44 42 40 38 36 34 850
OIP3 vs. Freq. (11dBm Output Tones)
46 44 42 40 38 36 34
860 870 880 890 900 910
OIP3 vs. Tone Power @880MHz
OIP3 (dBm)
25C -40C 85C
OIP3 (dBm)
25C -40C 85C
2
4
6
8
10
12
14
16
Frequency (MHz)
Pout per tone (dBm)
450 MHz & 2140MHz Application Circuits available in Application Note AN-078 at www.sirenza.com
303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com
EDS-104625 Rev C
SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier
1960 MHz Application Circuit Data, ID=135mA, T=+25C, RBias=20 Ohm, VS=8V
26 26 25
P1dB vs. Frequency
-40 -45 -50
ACP vs. Ch. Power (IS-95 9 Ch. Fwd. 1960MHz)
25C -40C 85C
P1dB (dBm)
ACP (dB)
25C -40C 85C
25 24 24 23 23 22 1930
-55 -60 -65 -70 -75
1940
1950
1960
1970
1980
1990
10
11
12
13
14
15
16
17
18
19
Frequency (MHz)
Channel Power (dBm)
S21 over Temperature
22
0
Input/Output Return Loss, Isolation vs. Frequency, T=25C
20 18
-5 -10
Gain (dB)
-15 -20
dB
25C
16 14 12 1930 -40C 85C 1940 1950 1960 1970 1980 1990
-25 -30 -35 -40 1930 1940 1950 S11 S12 S22 1960 1970 1980 1990
Frequency (MHz)
Frequency (MHz)
OIP3 vs. Tone Power @1960MHz
46 44 42
OIP3 vs. Freq. (11dBm Output Tones)
46 44
OIP3 (dBm)
42 40 38 36 34 1930 25C -40C 85C
IP3 (dBm)
40 38 36 34 25C -40C 85C
1940
1950
1960
1970
1980
1990
2
4
6
8
10
12
14
16
Frequency (MHz)
Pout per tone (dBm)
450 MHz & 2140MHz Application Circuits available in Application Note AN-078 at www.sirenza.com
303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com
EDS-104625 Rev C
SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier
Application Schematic & Assembly Drawing 880MHz Circuit
Note: Electrical lengths
are determined from the center of a shunt component and a cut on the center trace
1 2 3 4 5 6 7 8 9 10 11 12 13
50, 4.6 50, 9.8 50, 3.1 50, 2.3 50, 6.7 50, 4.2 50, 2.9 50, 2.9 50, 4.2 50, 3.3 50, 3.9 50, 2.3 50, 9.1
20 1.0uF Tantalum
180
1200pF 68 5
82nH
10
SXB-2089Z
4
10nH
1
22pF
2
5.6pF
3.3
3
6 7 8
9
11
1.5nH
12
13
1.8pF 68pF
RF In
RF Out
1200pF
1
Bill of Materials C1 TAJB105KLRH Rohm 1.0uF C2,C5 MCH185C122KK Rohm 1200pF C3 MCH185A680JK Rohm 68pF C4 MCH185A1R8CK Rohm 1.8pF C6 MCH185A5R6DK Rohm 5.6pF C7 MCH185A220JK Rohm 22pF L1 LL1608-FS10NJ Toko 10nH L2 LL1608-FS1N5S Toko 1.5nH L3 LL1608-FSR82NJ Toko 82nH R1 20 2515 res (1%) R2 180 0603 res (5%) R3 68 0603 res (5%) R4 3.3 0603 res (5%) R5 1K 0603 res (5%) Connectors 2x PSF-S01-1mm GigaLane Co. Heat sink EEF-101407 PCB ECB-102925-B
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 5
+
http://www.sirenza.com
EDS-104625 Rev C
SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier Application Schematic & Assembly Drawing 1960MHz Circuit
Note: Electrical lengths
are determined from the center of a shunt component and a cut on the center trace
1 2 3 4 5 6 7 8 9 10 11 12 13 14
50, 15.9 50, 7.0 50, 6.2 50, 6.8 50, 5.1 50, 14.9 50, 9.3 50, 6.4 50, 6.4 50, 9.3 50, 7.3 50, 8.6 50, 10.0 50, 15.4 1 2
1.8pF
20 1.0uF Tantalum
180
1200pF 68 6
27nH
11
SXB-2089Z
5
10nH
4.7pF
3.6
3 2.7pF
4
7 8 9
10
12
1.2nH
13
14
1.2pF 12pF
RF In
RF Out
1200pF
1.5
Bill of Materials C1 TAJB105KLRH Rohm 1.0uF C2,C5 MCH185C122KK Rohm 1200pF C3 MCH185A120JK Rohm 12pF C4 MCH185A1R2CK Rohm 1.2pF C6 MCH185A1R8CK Rohm 1.8pF C7 MCH185A4R7CK Rohm 4.7pF C8 MCH185A2R7CK Rohm 2.7pF L1 LL1608-FS10NJ Toko 10nH L2 LL1608-FS1N2S Toko 1.2nH L3 LL1608-FS270JK Toko 27nH R1 20 2512 res (1%) R2 180 0603 res (5%) R3 68 0603 res (5%) R4 3.6 0603 res (5%) R5 1.5K 0603 res (5%) Connectors 2x PSF-S01-1mm GigaLane Co. Heat sink EEF-101407 PCB ECB-102925-B
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 6
+
http://www.sirenza.com
EDS-104625 Rev C
SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier Suggested PCB Pad Layout
Dimensions in inches [millimeters]
Pin #
Function
Description
1 2,4 3
RF IN GND
RF input pin. This pin requires the use of an external DC blocking capacitor and matching components chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible.
RF OUT/ RF output pin. This pin requires the use of an external DC blocking capacitor, BIAS choke and matching components as shown in the Application Schematic.
Package Marking 4
Part Number Ordering Information
Part Number Reel Size Devices / Reel
XB2Z
2
SXB-2089Z
7"
1000
1
2
Package Dimensions
(Refer to Application Note AN075 at www.sirenza.com)
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 7
1
3
3
http://www.sirenza.com
EDS-104625 Rev C

▲Up To Search▲

Price & Availability of SXB-2089Z

	To Download SXB-2089Z Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .